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| Transistors 2SC2634 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1127 Features 0.70.1 Unit: mm 5.00.2 4.00.2 0.70.2 12.90.5 * Low noise voltage NV * High forward current transfer ratio hFE Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 55 7 100 200 400 150 -55 to +150 Unit V V 2.30.2 0.45+0.15 -0.1 2.5+0.6 -0.2 1 23 5.10.2 0.45+0.15 -0.1 2.5+0.6 -0.2 V mA mA mW C C 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoffcurrent (Base open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Noise voltage Symbol VCBO VCEO VEBO VBE ICBO ICEO hFE VCE(sat) fT NV Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCE = 1 V, IC = 30 mA VCB = 10 V, IE = 0 VCE = 10 V, IB = 0 VCE = 5 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 5 V, IE = -2 mA, f = 200 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 k, Function = FLAT 200 150 180 1 0.01 Min 60 55 7 1 100 1.00 700 0.6 Typ Max Unit V V V V nA A V MHz mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE R 180 to 360 S 260 to 520 T 360 to 700 Publication date: March 2003 SJC00119BED 1 2SC2634 PC Ta 500 120 IC VCE IB = 400 A Ta = 25C 350 A 300 A IC VBE 120 25C 100 Ta = 75C -25C VCE = 5 V Collector power dissipation PC (mW) Collector current IC (mA) 80 Collector current IC (mA) 400 100 250 A 200 A 150 A 100 A 50 A 80 300 60 60 200 40 40 100 20 20 0 0 0 40 80 120 160 200 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 100 IC / IB = 10 1 000 hFE IC VCE = 5 V fT I E 400 VCB = 5 V Ta = 25C Forward current transfer ratio hFE 800 Transition frequency fT (MHz) 10 300 600 Ta = 75C 400 25C -25C 1 200 0.1 Ta = 75C 25C -25C 100 200 0.01 0.1 1 10 100 0 0.1 1 10 100 0 -1 -10 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 10 IE = 0 f = 1 MHz Ta = 25C NF IE 8 VCE = 5 V Rg = 1 k Ta = 25C 120 NV IC VCE = 10 V GV = 80 dB Function = FLAT 8 100 Noise voltage NV (mV) Noise figure NF (dB) 6 80 6 Rg = 100 k 4 f = 100 Hz 60 22 k 40 5 k 20 4 2 2 1 kHz 10 kHz 0 1 10 100 0 -10 -100 -1 000 0 0.01 0.1 1 Collector-base voltage VCB (V) Emitter current IE (A) Collector current IC (mA) 2 SJC00119BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL This datasheet has been download from: www..com Datasheets for electronics components. |
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